Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA3666-99F is a two-stage self biased wide band monolithic Low Noise Amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||