Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA2159-99F is a four stage Low Noise and Medium Power Amplifier. The backside of the chip is both RF and DC grounded. This simplifies the assembly process.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||