Don’t miss the opportunity to join the next UMS Shared Foundry runs
- Foundry
Before summer, submit your layout for BES Schottky diode , PH10 Low Noise or GH25 GaN HEMT MPW.
Before summer, submit your layout for BES Schottky diode , PH10 Low Noise or GH25 GaN HEMT MPW.
UMS is glad to be quoted in 2 papers published in IEEE Access by the Department of Electronics of the AGH University of Science and Technology in Krakow, Poland.
The CHA8352-99F is a 20W output power GaN High Power Amplifier.
The CHA4253a98F is a 4 stage 17-24GHz Medium Power Amplifier
Discover in video the CHT4660-FAB, UMS new 0.5-16GHz wideband variable attenuator proposed in hermetic metal ceramic SMD package
