UMS leads the European 5G GaN program
The major objective of the 5G_GaN2 project is to develop new industrial disruptive technologies from semiconductor through to integration.
It will support the birth of a new sub system architecture and target the step up in performance required for the 5G generation from Ku to E bands for BTS, point to point & SATCOM communication networks
The European Commission is funding this 3 years project that involves 17 partners from 8 different countries.
This project is built on 3 major axes:
- Development of SIP (System In Package) technology allowing heterogenous die technology integration,
- Realization of Rx/Tx circuits for 5G and Satcom from Ka up to E Bands,
- Development of GaN technology for E Band.
UMS is proud to lead this consortium covering all the needs from wafer suppliers, semiconductor fabrication to system integrators.
More information: https://www.ecsel.eu/projects/5ggan2