CHA2159-99F - 55-65 Low Noise / Medium Power Amplifier
Gain (dB)
20
Gain Flatness (+/-dB)
1
Bias (mA)
115
Bias (V)
3.5
Noise Figure (dB)
4
P-1dB OUT (dBm)
14
RF Bandwidth (GHz) Max
65
RF Bandwidth (GHz) Min
55
Market
46GHz, V-Band & E-Band
The CHA2159-99F is a four stage Low Noise and Medium Power Amplifier. The backside of the chip is both RF and DC grounded. This simplifies the assembly process.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
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