The CHA8252-99F is a 3 stage 17.3-20.3GHz GaN High Power Amplifier
This product exhibits 10W output power with a high PAE of more than 35% @ 16dBm input Power.
This circuit also features an excellent linear gain of 31dB.
The CHA8252-99F is dedicated to Ka-Band Downlink satcom applications, compatible with space constraints due to biasing @ 18V.
It is designed on a 0.15µm GaN HEMT proprietary technology.
Main features:
- Frequency range: 17.3-20.3GHz
- PAE: > 35% @ 16dBm Input Power
- Linear Gain: 31dB
- Pout: 40.5dBm @ 16dBm Input Power
- Return losses: Input 9dB / Output 7dB
- DC bias: 18V@300mA
- Chip size: 5x4x0.07mm