CHA7060-QAB - 5.6-8.5GHz 12W HPA

Gain (dB)

Sat. Output Power (dBm)

Bias (mA)

420

Bias (V)

IP3 (dBm)

P-1dB OUT (dBm)

PAE (%)

40 @ 41dBm Pout

RF Bandwidth (GHz) Max

8.5

RF Bandwidth (GHz) Min

5.6

Market

6-8.5GHz Chipset

The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12W output power over 5.6-8.5GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM). It is dedicated to a wide range of applications such as Point-to-Point Radio.

This circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50Ω matched and integrate ESD RF protections.